| 发明名称 | Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer | ||
| 摘要 | A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced with an unstressed semiconductor portion. The unstressed semiconductor portion includes a first semiconductor material. The method further includes driving a second semiconductor material into the first semiconductor material of the unstressed semiconductor portion defining a second active region. | ||
| 申请公布号 | US9466720(B2) | 申请公布日期 | 2016.10.11 |
| 申请号 | US201514675156 | 申请日期 | 2015.03.31 |
| 申请人 | STMICROELECTRONICS, INC. | 发明人 | Liu Qing;Loubet Nicolas |
| 分类号 | H01L21/8238;H01L29/78;H01L29/66;H01L21/762;H01L29/10;H01L29/49;H01L29/165;H01L21/02;H01L21/84;H01L27/12;H01L21/225;H01L27/092 | 主分类号 | H01L21/8238 |
| 代理机构 | Seed IP Law Group PLLC | 代理人 | Seed IP Law Group PLLC |
| 主权项 | 1. A method for forming a semiconductor device comprising: providing a stressed silicon-on-insulator (SOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions, the first stressed semiconductor portion defining a first active region; replacing the second stressed semiconductor portion with another semiconductor portion comprising a first semiconductor material; and driving a second semiconductor material into the first semiconductor material of the other semiconductor portion defining a second active region. | ||
| 地址 | Coppell TX US | ||