| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To satisfactorily dry the upper surface of a substrate without generating any watermark. <P>SOLUTION: When a cleaning process is finished, a shielding plate 2 is arranged at a position close to the upper surface of a wafer W held by a spin chuck 1. Deionized water is then supplied to the upper surface of the wafer W from a liquid supply port 252a. The deionized water supplied to the upper surface of the wafer W spreads on the upper surface f the wafer W, and is accumulated in the form of a liquid membrane by its surface tension on the wafer W. While the liquid accumulation for forming the liquid membrane is carried out, nitrogen gas is supplied from a first drying gas supply port 251a and a second drying gas supply port 26a to replace the atmosphere of the space between the deionized water membrane on the wafer W and the shielding plate 2 with the nitrogen gas. Thereafter, an IPA (IsoPropyl Alcohol) vapor supply process is carried out. In the IPA vapor supply process, nitrogen gas containing IPA vapor is supplied from the first drying gas supply port 251a to the central part of the upper surface of the wafer W. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
