| 摘要 |
A circuit of generating reference voltage is provided to generate reference voltage having a low voltage level applied to a low power memory device by using a resistor. In a circuit of generating reference voltage, a reference voltage generating circuit(100) comprises a controller(110), a PMOS transistor(MP), a first voltage(V1) generating unit(120) and the second voltage(V2) generating unit(130). A first and the second voltage generation part comprise the fifth resistance(R11, R12, R21, RE, R22) and the first and the second bipolar transistor(Q10, Q20). A first voltage generation part produces the first voltage(V1) by a first resistance, a third and fourth resistance and the first bipolar transistor. A second voltage generation part produces the second voltage(V2) by a second resistance, a fifth resistance and the second bipolar transistor. A comparison unit outputs a control signal having the voltage level according to the first and the second voltage by using the OP amp. |
