| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an E/D (enhancement-depletion) inverter which can be easily manufactured. <P>SOLUTION: The method of manufacturing an inverter is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, wherein the inverter is the enhancement-depletion (E/D) inverter having a plurality of thin film transistors, is characterized by including the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and performing heat treatment to at least one of the channel layers of the first and second transistors. <P>COPYRIGHT: (C)2009,JPO&INPIT |
