APPARATUS AND METHOD FOR PARTIAL ENERGY ION IMPLANTATION

摘要

An apparatus and method for partial energy ion implantation is provided to perform uneven ion implantation within a wafer by making the ion implantation energy different according to the specific aspect section of the wafer. Ion implantation equipment comprises a first deceleration part including an ion beam generator and a decelerating electrode(141) and comprises a second deceleration part including a second decelerating electrode(151). The energy of the ion beam generated from the ion beam generator decelerates by the first deceleration part. The energy of the ion beam decelerated from the first deceleration part decelerates by the second deceleration part. The energy of the ion beam slows down to the different first energy and the second energy according to the domain of the wafer in which the energy of the ion beam the ion beam is injected by the second deceleration part.