Image sensor device with white pixel improvement

摘要

An image sensor device is provided, and includes pixel units. Each of the pixel units includes a light sensing element, a first transistor and a second transistor. The first transistor is coupled to the light sensing element. The second transistor is coupled to the light sensing element and the first transistor. The first transistor includes a first gate structure having a first width, and the second transistor includes a second gate structure having a second width, in which a distance between the first gate structure and the second gate structure is substantially greater than the first width and the second width.

主权项

1. An image sensor device, comprising:
a plurality of pixel units, each of the pixel units comprising:
a light sensing element;a source follower transistor coupled to the light sensing element; anda row select transistor coupled to the light sensing element and the source follower transistor;wherein the source follower transistor comprises a first gate structure having a first width, and the row select transistor comprises a second gate structure having a second width, wherein a first distance between the first gate structure and the second gate structure is substantially greater than the first width and the second width.