CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A CMOS image sensor is provided to reduce the overlap capacitance produced between a floating diffusion area and a gate of a reset transistor, thereby suppressing the generation of noise. CONSTITUTION: The CMOS transistor comprises a first conducting semiconductor layer, a second conducting floating diffusion area formed under any surface of the semiconductor layer, a gate electrode of a reset transistor formed on the semiconductor layer adjacent to the floating diffusion area, and a gate insulated film positioned between the floating diffusion area and the gate of a reset transistor. The one edge of the gate electrode is overlapped with the floating diffusion area. A gate insulated film has relatively thicker than it of a gate oxide film positioned between a P-epi layer and the gate.