METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device is provided to restrain the influence of a laser beam on an adjacent fuse layer by removing an oxide layer from an upper portion alone of the fuse layer. A fuse layer(110) is formed on a semiconductor substrate with a lower structure. An oxide layer(120) is formed on the entire surface of the resultant structure. A fix layer is formed on the oxide layer. The fix layer is removed from an upper surface of the fuse layer by using an etching process. A fuse contact(140) is formed on the resultant structure by removing selectively the oxide layer from the upper portion of the fuse layer. A repair process is then performed on the resultant structure by using a laser beam.