Semiconductor device

摘要

A semiconductor device includes; a semiconductor layer mainly made of GaN; a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; and an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer. The protective film includes: a first layer made of Al2O3 and arranged adjacent to the semiconductor layer; a second layer made of an electrical insulation material different from Al2O3 and formed on the first layer; and an opening structure formed to pass through the first layer and the second layer. The electrode is located inside of the opening structure.

主权项

1. A Schottky barrier diode comprising:
a semiconductor layer mainly made of gallium nitride (GaN); a protective film provided to have electrical insulation property and configured to coat the semiconductor layer; an electrode provided to have electrical conductivity and configured to form a Schottky junction with the semiconductor layer; a field plate electrode provided on the electrode, the field plate electrode has electrical conductivity; and a back electrode provided on a bottom side of the semiconductor layer opposite from the electrode, the back electrode has electrical conductivity and is configured to form an ohmic junction with the bottom side of the semiconductor layer, wherein the protective film includes:
a first layer made of aluminum oxide (Al2O3) and arranged adjacent to the semiconductor layer;a second layer made of an electrical insulation material different from aluminum oxide (Al2O3) and formed on the first layer without being adjacent to the semiconductor layer; andan opening structure formed to pass through the first layer and the second layer, wherein at least a part of the electrode is located inside of the opening structure, and at least one of the electrode and the field plate electrode is extended on the second layer.