| 摘要 |
A method of forming a tunnel oxide layer of a non-volatile memory cell is disclosed. First, a first dielectric layer and a second dielectric layer are formed on a semiconductor substrate. After patterning the second dielectric layer to form an opening, the semiconductor substrate is oxidized to form a non-tunnel oxide within the opening. After removing the second dielectric layer, source/drain regions are formed by performing an ion implantation process and an annealing process. After removing the first dielectric layer, an HSG layer with a plurality of HSG grains are formed on the source/drain regions. After that, the HSG layer is partially etched by HF vapor to enlarge a spacing between the HSG grains. Finally, the HSG layer is oxidized to form the tunnel oxide layer.
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