发明名称 |
Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate |
摘要 |
A method of producing a separated GaN crystal body grown by vapor phase epitaxy on a substrate made of material different from GaN is provided. In this method, a nitride deposit is formed during the growth on a periphery of the substrate and GaN crystal body. The present method comprises the steps of: processing the periphery of the substrate to remove the nitride deposit; and, after the peripheral processing, separating the substrate from the GaN crystal body to make the substrate and the GaN crystal body independent of each other.
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申请公布号 |
US7749325(B2) |
申请公布日期 |
2010.07.06 |
申请号 |
US20070655884 |
申请日期 |
2007.01.22 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAYAMA MASAHIRO |
分类号 |
H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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