| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching apparatus in which a more easily formable upper electrode is provided and which enhances more precise etching uniformity. <P>SOLUTION: The plasma etching apparatus to be disclosed includes an upper electrode, a lower electrode which is so arranged as to face the upper electrode and on the upper part of which a substrate is loaded, and a high-frequency generator for applying a high-frequency voltage to the upper electrode or to the lower electrode to generate a plasma. The plasma etching apparatus has at least a part discontinuously changing the distance between the facing planes of the upper electrode and the lower electrode by adjusting the geometry of the upper electrode. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
