Triode

摘要

A triode includes a semiconductor, a deep n-well, a p-well, an n+ doping region, and a p+ doping region. The deep n-well is disposed adjacent to the semiconductor substrate. The p-well is included in the deep n-well and serves as a collector region of the triode. The n+ doping region serves as a base region of the triode. The p+ doping region serves as an emitter region of the triode. The deep n-well is coupled to the n+ doping region.

主权项

1. A triode, comprising:
a semiconductor substrate; a deep n-well adjacent to the semiconductor substrate; a p-well serving as a collector region of the triode; an n+ doping region serving as a base region of the triode; and a p+ doping region serving as an emitter region of the triode; wherein the deep n-well is coupled to the n+ doping region; wherein a first metal wire extends from the p+ doping region to receive an emitter voltage, a second metal wire extends from the n+ doping region to receive a base voltage, a third metal wire extends from the p-well to receive a collector voltage, and a fourth metal wire extends from the deep n-well to receive the emitter voltage.