| 摘要 |
<p>PURPOSE: It supplies developer to the substrate in which the positive voltage is applied and the method for forming resist pattern of the semiconductor device eliminates the domain in which the exposure process operates. The resist film pattern which selectively exposes the same pattern object film is formed. CONSTITUTION: The pattern target film and resist film(220) are formed in the top of the substrate. The exposure process selectively operates in the chemical amplified resist film. The positive voltage is applied in the pattern target film above the light projecting board(200) in which the exposure process operates.</p> |
