Semiconductor device equipped with antifuse elements and a method for manufacturing an FPGA

摘要

A semi conductor device is provided having the following arrangement. A first electrode is formed on the major surface of a semiconductor substrate and comprises a first Al connection layer formed over the semiconductor substrate and a barrier metal layer provided on, and electrically connected to, the first Al connection layer and serving as a barrier against the Al. An insulating film is formed over the semiconductor substrate so as to cover the first electrode. An opening is formed in the insulating film so as to partially expose the first electrode. An antifuse film is formed in a manner to partially cover the insulating film and contact with the barrier metal layer of the first electrode with the opening therebetween. The antifuse film is formed of silicon nitride whose nitrogen/silicon atomic composition ratio ranges from 0.6 to 1.2. A second electrode is formed over the antifuse film and comprised of a barrier metal layer serving as a barrier against the Al.