发明名称 EQUIPMENT AND METHOD FOR FORMING FINE PATTERN
摘要 PROBLEM TO BE SOLVED: To simply transfer a pattern having a fine size of a light wavelength or smaller without using a complicated optical system, etc., at low cost, by using a mask provided with a near-field exposure pattern. SOLUTION: A mask 12 provided with a near-field exposure pattern is fixed on a waveguide path 11. A light source 13 is connected on the side plane 11a on the input side of the waveguide path 11. The waveguide path 11 is coated with a metal film, except an incidence plane 11a and the mask 12. Beams applied from the incidence plane 11a are sealed in the light transmitting material in the waveguide path 11. A near-field is formed by adhering the resist plane of a wafer on the mask 12 or by making the resist plane proximate to the light wavelength or smaller. The beams sealed in the waveguide path 11 are propagated to the external. Thus, the transfer pattern of a fine pattern is formed on the photoresist on the wafer.
申请公布号 JPH11317346(A) 申请公布日期 1999.11.16
申请号 JP19980136153 申请日期 1998.04.30
申请人 EBARA CORP;HATAMURA YOTARO 发明人 HATAKEYAMA MASAKI;ICHIKI KATSUNORI;SATAKE TORU;HATAMURA YOTARO;NAKAO MASAYUKI
分类号 G21K5/02;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G21K5/02
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