| 摘要 |
<P>PROBLEM TO BE SOLVED: To fabricate recess-channel transistors having different characteristics simultaneously in the same step. Ž<P>SOLUTION: A method of manufacturing a semiconductor device includes a step wherein a semiconductor substrate 2 is etched using hard masks 71-73 and sidewall insulation films 38 are formed on the side faces of the hard masks 71-73, and then the sidewall insulation films 38 formed on the side faces of the hard masks 71 and 72 are selectively removed, and thereafter the semiconductor substrate 2 is further etched using the hard masks 71-73 and the sidewall insulation film 38 to form gate trenches 12, 22, 32 simultaneously in a portion of the semiconductor substrate 2 which has been covered by the hard masks 71-73; and a step of forming gate electrodes 13, 23, 33 inside the gate trenches 12, 22, 32. Thereby, multiple recess-channel transistors with different heights for fin-like regions 21f and 31f can be fabricated simultaneously. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
