| 摘要 |
PROBLEM TO BE SOLVED: To provide a development nozzle and development method, capable of suppressing in-plane variation of resist pattern size caused by development and suppressing development loading effect in a photomask.SOLUTION: The planar development nozzle, used in a resist development process of photomask manufacturing, comprises unit nozzles of development liquid arrayed in two dimensions on a plane on a photomask substrate side which is to be developed. The size of the planar development nozzle is larger than the size of the object to be developed. |
