Semiconductor memory device improving threshold voltage of unselected memory block and operating method thereof

摘要

The present invention relates to a semiconductor memory device and an operating method thereof. The semiconductor memory device may include at least two memory blocks sharing a row decoder, and a peripheral circuit performing a read operation on a selected memory block, between the at least two memory blocks, wherein the peripheral circuit applies a discharge voltage to an unselected memory block, between the at least two memory blocks, for a preset time after a period in which a read voltage is applied to the selected memory block is terminated.

主权项

1. A semiconductor memory device comprising:
at least two memory blocks suitable for sharing a row decoder; and a peripheral circuit suitable for performing a read operation on a selected memory block of the at least two memory blocks, wherein the peripheral circuit applies a discharge voltage to an unselected memory block of the at least two memory blocks for a preset time after a period in which a read voltage is applied to the selected memory block is terminated, and wherein the at least two memory blocks are coupled to different global word line groups in response to a block selection signal output from the row decoder.