Thin film transistor, display device having the same, and associated methods

摘要

A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.