PHOTOELECTRIC CONVERSION ELEMENT

摘要

A photoelectric conversion element 100 includes an n-type monocrystalline silicon substrate 1, an non-crystalline thin film 2, i-type non-crystalline thin films 11 to 1m and 21 to 2m−1, p-type non-crystalline thin films 31 to 3m, and n-type non-crystalline thin films 41 to 4m−1. The non-crystalline thin film 2 is configured of non-crystalline thin films 201 and 202 and is disposed in contact with the surface on the light incident side of the n-type monocrystalline silicon substrate 1. The non-crystalline thin film 201 is configured of a-Si, and the non-crystalline thin film 202 is configured of a-SiNx (0.78≦x≦1.03). The i-type non-crystalline thin films 11 to 1m and 21 to 2m−1 are disposed in contact with the rear surface of the n-type monocrystalline silicon substrate 1. The p-type non-crystalline thin films 31 to 3m are disposed in contact with the i-type non-crystalline thin films 11 to 1m. The n-type non-crystalline thin films 41 to 4m−1 are disposed in contact with the i-type non-crystalline thin films 21 to 2m−1.

主权项

1. A photoelectric conversion element comprising:
an non-crystalline thin film that is disposed on a semiconductor substrate in contact with a surface on a light incident side of the semiconductor substrate, wherein the non-crystalline thin film includes a desired atom for setting the optical band gap of the non-crystalline thin film to an optical band gap greater than the optical band gap of any of an non-crystalline silicon thin film, an non-crystalline silicon germanium thin film, and an non-crystalline germanium thin film, and the composition ratio of the desired atom in an end portion on the opposite side to the semiconductor substrate side of the non-crystalline thin film is greater than the composition ratio of the desired atom in an end portion on the semiconductor substrate side thereof.