| 发明名称 |
Memories having a built-in self-test (BIST) feature |
| 摘要 |
A memory system includes a memory and a built-in self-test (BIST) unit coupled to the memory. The BIST unit is configured to run a test pattern on the memory to accumulate a fault signature, and store fault signature information based on the accumulated fault signature at multiple locations in the memory. |
| 申请公布号 |
US9384856(B2) |
申请公布日期 |
2016.07.05 |
| 申请号 |
US201314102727 |
申请日期 |
2013.12.11 |
| 申请人 |
Freescale Semiconductor, Inc. |
发明人 |
Spruth Henning F.;Qureshi Qadeer A.;Silveira Reinaldo |
| 分类号 |
G11C29/00;G11C29/38;G06F11/263;G11C29/42;G11C29/44 |
主分类号 |
G11C29/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory system, comprising:
a memory; and a built-in self-test (BIST) unit coupled to the memory, wherein the BIST unit is configured to:
run a test pattern on the memory to accumulate a fault signature; andstore fault signature information based on the accumulated fault signature at multiple locations in the memory, wherein
a same copy of the fault signature information is stored at two or more of the multiple locations in the memory on which the test pattern is run. |
| 地址 |
Austin TX US |
