发明名称 SEMICONDUCTOR PHOTOCATALYTIC FILM AND OXIDE-REDUCTION REACTOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor photocatalytic film of a photocatalyst capable of realizing efficient charge separation with a simple system without forming an electrode, and an oxide-reduction reactor.SOLUTION: Provided is a semiconductor photocatalyst film 100 comprising: a substrate 101; a first semiconductor thin film 102 formed on the substrate 101; mountain-shaped semiconductor structures 103-1 to N being a plurality of mountain-shaped semiconductor structures, each of which is parallely deposited over one direction in the upper side of the first semiconductor thin film 102, made of the same material of the first semiconductor thin film 102, and whose cross section to a vertical direction to one direction has a polygonal shape; metal thin films 104-1 to N having mountain-shaped semiconductor structure and formed on the first slant in contact with the upper side; and a second semiconductor thin films 105-1 to N having mountain-shaped structure and formed on the second slant being the slant in contact with the upper side and different from the first slant and irradiated with light 303 on the surface in a water solution 302.SELECTED DRAWING: Figure 3
申请公布号 JP2016215159(A) 申请公布日期 2016.12.22
申请号 JP20150104978 申请日期 2015.05.22
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ONO YOKO;KOMATSU TAKESHI;TANIYASU YOSHITAKA;UZUMAKI YUYA;NAKAMURA JIRO
分类号 B01J35/02;B01J27/24;C01B3/04;C01B13/02;C01B31/18 主分类号 B01J35/02
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