| 摘要 |
PROBLEM TO BE SOLVED: To improve precision of a signal obtained by each pixel cell by reducing a leak of stored electric charges due to X-ray irradiation. SOLUTION: Each pixel cell 3 uses a P channel MOSFET with an octagonal structure as an MOSFET 13 for a reset switch for initializing the potential of a charge storage portion 12. Even when positive electric charges are stored in a gate oxide film by irradiation with X rays, the P channel MOSFET has no false channel formed right below the gate oxide film and can reduce a leak through a channel as compared with an N channel MOSFET. COPYRIGHT: (C)2009,JPO&INPIT
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