Resistive memory device, resistive memory system and method of operating the resistive memory device

摘要

A method of operating a resistive memory device and a resistive memory system including a resistive memory device is for a resistive memory device including a plurality of bit lines and at least one dummy bit line. The method of operating the resistive memory device includes detecting a first address accompanying a first command, generating a plurality of inhibit voltages for biasing non-selected lines, and providing to a first dummy bit line a first inhibit voltage selected from among the plurality of inhibit voltages based on a result of detecting the first address.

主权项

1. A method of operating a resistive memory device, wherein the resistive memory device comprises a plurality of bit lines and at least one dummy bit line, the method comprising:
detecting a first address accompanying a first command related to a memory operation of the resistive memory device; generating a plurality of inhibit voltages for biasing non-selected lines from among the plurality of bit lines; and providing to a first dummy bit line from among the at least one dummy bit line a first inhibit voltage selected from among the plurality of inhibit voltages based on a result of detecting the first address.