| 摘要 |
The purpose of the present invention is to manufacture a sputtering target for a gallium nitride thin film having low oxygen content, high density, and low resistance. Using a gallium nitride powder having the powder properties of low oxygen content and high bulk density, a gallium nitride sintered compact having low oxygen content, high density, and low resistance can be fabricated by carrying out hot pressing in a high vacuum at high temperature. |
