| 发明名称 |
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING SUCH JUNCTIONS |
| 摘要 |
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor. |
| 申请公布号 |
US2016372564(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615251210 |
申请日期 |
2016.08.30 |
| 申请人 |
Acorn Technologies, Inc. |
发明人 |
Grupp Daniel E.;Connelly Daniel J. |
| 分类号 |
H01L29/45;H01L29/78 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrical junction comprising an interface layer disposed between a contact metal and a semiconductor, the semiconductor comprising a source or drain of a transistor, the interface layer comprising a metal oxide separation layer and a monolayer passivation layer and configured to provide a specific contact resistivity between the contact metal and the semiconductor of less than 1 Ω·μm2, wherein the monolayer passivation layer is a monolayer of arsenic. |
| 地址 |
La Jolla CA US |
