SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

摘要

A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.

主权项

1. An imaging device, comprising:
a pixel array unit, including:
a shared pixel structure, wherein the shared pixel structure includes:
a plurality of photodiodes, wherein the photodiodes are arranged in rows and columns;a plurality of transfer transistors, wherein each photodiode is associated with a transfer transistor; anda plurality of shared pixel transistors,
wherein the photodiodes are distributed in a lattice-type arrangement along the plurality of rows and columns,wherein the photodiodes are located within areas encompassing intersections between the rows and columns,wherein a photodiode is not present in at least a first area encompassing an intersection between one of the rows and one of the columns, andwherein the plurality of transfer transistors are located in the first area encompassing an intersection between one of the rows and one of the columns in which a photodiode is not present.