| 摘要 |
According to an embodiment of the present invention, a semiconductor device includes: a bit line crossing an active area of a substrate in one direction; separation patterns disposed to face each other in the one direction on the substrate; a storage node contact disposed between the separation patterns and coming in contact with source/drain areas provided to the end of the active area; and a spacer disposed between the bit line and the storage node contact. The separation patterns can includes a material having etching selectivity for the spacer. |
