发明名称 |
Method for forming silicon trench |
摘要 |
A method for forming a silicon trench, comprises the steps of: defining an etching area at a silicon substrate; forming metal catalysts at the surface of the etching area; immersing the silicon substrate in a first etching solution thereby forming anisotropic silicon nanostructures in the etching area; immersing the silicon substrate in a second etching solution thereby resulting in the silicon nanostructures being side-etched and detached from the silicon substrate, thus forming the silicon trench.
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申请公布号 |
US8193095(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US201113026164 |
申请日期 |
2011.02.11 |
申请人 |
LIN CHING-FUH;HUNG SHIH-CHE;SYU SHU-JIA;NATIONAL TAIWAN UNIVERSITY |
发明人 |
LIN CHING-FUH;HUNG SHIH-CHE;SYU SHU-JIA |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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