| 摘要 |
<p>A method for forming a barrier metal layer in a semiconductor device is provided to make a TaSiN layer react with NH3 gas or H2 gas and eliminate the impurities in the TaSiN layer by forming a Si source layer and a Ta layer by a thickness of several to several tens of angstroms and by injecting nitrogen-containing gas to the Si source layer and the Ta layer, thereby forming a TaSiN layer of several to several tens of angstroms. An interlayer dielectric(13) is formed on the front surface of a metal layer(12) formed on a structure(11) of a semiconductor substrate and is selectively etched to form a hole of a predetermined width exposing a part of the metal layer. A Si source layer is formed on the inner wall of the hole. While a Ta layer is formed on the Si source layer, nitrogen-containing gas is injected to the upper part of the Ta layer to make the Si source layer, the Ta layer and nitrogen react with each other so that a TaSiN layer is formed.</p> |
