| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a zinc oxide based compound semiconductor element in which the driving voltage is not raised even if the semiconductor element is formed by forming a multilayer portion having a heterojunction of ZnO based compound semiconductor layer, and excellent element characteristics are attained by improving crystallinity. <P>SOLUTION: On the major surface of a substrate 1 composed of Mg<SB>x</SB>Zn<SB>1-x</SB>O (0≤x≤0.5) having the major surface of face A(11-20) or face M(10-10), ZnO based compound semiconductor single crystal layers 2-6 are grown epitaxially while orienting the face ä11-20} or ä10-10} in parallel with the major surface and orienting the face ä0001} perpendicularly to the major surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
