发明名称 |
Nitride semiconductor device, its manufacturing method, and semiconductor optical apparatus |
摘要 |
A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 mum or more.
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申请公布号 |
US2005042787(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040493137 |
申请日期 |
2004.10.18 |
申请人 |
ITO SHIGETOSHI;YUASA TAKAYUKI;UETA YOSHIHIRO;TANEYA MOTOTAKA;TANI ZENPEI;MOTOKI KENSAKU |
发明人 |
ITO SHIGETOSHI;YUASA TAKAYUKI;UETA YOSHIHIRO;TANEYA MOTOTAKA;TANI ZENPEI;MOTOKI KENSAKU |
分类号 |
H01L21/20;H01S5/02;H01S5/323;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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主权项 |
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地址 |
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