METHODS FOR SEMICONDUCTOR PASSIVATION BY NITRIDATION

摘要

In some embodiments, a semiconductor surface having a high mobility semiconductor may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

主权项

1. A method for integrated circuit fabrication, comprising:
passivating a surface of a substrate, the surface comprising a high mobility semiconductor, wherein passivating comprises:
removing native semiconductor oxide from the surface;subsequently forming a semiconductor oxide-containing film on the surface; andthermally nitriding the semiconductor oxide-containing film by exposing the semiconductor oxide-containing film to at least one of hydrazine and a hydrazine derivative.