发明名称 DIELECTRIC SUBSTRATE WITH HOLES AND METHOD OF MANUFACTURE
摘要 <p>DIELECTRIC SUBSTRATE WITH HOLES AND METHOD OF MANUFACTURE An aspect of the present invention comprises a method of forming holes in a dielectric substrate comprising the steps of applying a layer of photoresist to a dielectric substrate, exposing portions of the photoresist to actinic radiation through a photomask to form a pattern in the photoresist for an array of holes to be etched in the substrate, developing the photoresist, etching the dielectric substrate to form an array of holes, each hole extending at least partially through the dielectric substrate, and removing the excess photoresist. Another aspect of the present invention is a method of simultaneously forming holes in a dielectric substrate some of which extend partially through the substrate and some of which extend completely through the substrate. Other aspects of the present invention are dielectric substrates formed using the methods of the invention. (Figure 10)</p>
申请公布号 SG149040(A1) 申请公布日期 2009.01.29
申请号 SG20080093882 申请日期 2005.06.22
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 LEE VINCENT YONG CHIN;FU YI LIANG;KOYANAGI TATSUNORI;OHKURA YOSHIYUKI;ITO MASAHIKO
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