| 摘要 |
<p>Production of a thin semiconductor wafer (4) comprises applying a first carrier material (3) to a first surface of the wafer using a first connecting medium (2); processing a second surface of the wafer; applying a second carrier material (6) to the second surface of the wafer using a second connecting medium; detaching the first adhering connection and removing the first carrier material from the first surface of the wafer; processing the first surface of the wafer; and detaching the second adhering connection and removing the second carrier material from the second surface of the wafer. Preferred Features: The first adhering connection and the second adhering connection are separately removed. The carrier materials are made from glass, SiO2 or sapphire, or semiconductor material.</p> |
