SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SOLAR CELL, SOLAR CELL MANUFACTURING METHOD AND SOLAR CELL MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To achieve low reflectivity in a visual light range on a silicon substrate surface and high mobility of a minority carrier on a silicon surface to improve a property of a semiconductor device.SOLUTION: In a semiconductor device manufacturing method, a Si nanocrystal layer is formed on a surface of a silicon substrate with surface structure chemical transfer method (SSCT); and subsequently, an oxide-based thin film containing a chemically formed silicon dioxide (SiO) film and/or a valence electron supply source is formed on the Si nanocrystal layer; and a heating and annealing treatment is performed in a high-temperature oxygen atmosphere of 800-900°C and/or an annealing treatment is performed in a hydrogen atmosphere of 400-500°C to maintain an extremely low reflectivity within a visible light region on the surface of the silicon substrate and achieve improvement in internal quantum efficiency (IQE) property estimated from external quantum efficiency (EQE) property in view of reflection efficiency, improvement in minority carrier lifetime on the surface of the silicon substrate, and a high surface passivation effect.SELECTED DRAWING: Figure 23