发明名称 MANUFACTURING PROCESS FOR PHASE SHIFT MASK
摘要 <p>A method of manufacturing a phase shift mask is provided to improve reliability of the phase shift mask by modifying opaque defects of the phase shift mask without the damage of other portions using a light shielding pattern. A predetermined phase shift pattern(110) is formed on a mask substrate(100). The existence of opaque defects is checked on the predetermined phase shift pattern. When the opaque defects exist on the predetermined phase shift mask, a light shielding pattern is formed on the predetermined phase shift pattern. The predetermined phase shift pattern is selectively removed from the opaque defect generating region of the mask substrate by using the light shielding pattern as an etch mask.</p>
申请公布号 KR20070000533(A) 申请公布日期 2007.01.03
申请号 KR20050055929 申请日期 2005.06.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, HEE CHUN
分类号 H01L21/027 主分类号 H01L21/027
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