发明名称 ROTARY SILICON WAFER CLEANING APPARATUS
摘要 A rotary silicon wafer cleaning apparatus capable of enhancing the stability of silicon wafer through perfecting of the hydrogen termination for silicon wafer having undergone cleaning operation with the use of chemicals and pure water. The rotary silicon wafer cleaning apparatus comprises a silicon wafer drying equipment, the silicon wafer drying equipment composed of a mixed gas heating unit for heating a mixed gas consisting of a hydrogen gas, the hydrogen gas containing gaseous hydrogen in an amount of 0.05 vol.% or more, and an inert gas and a hydrogen radical generating unit provided with a platinum coating film capable of forming hydrogen radicals at portion in contact with the heated mixed gas, wherein a mixed gas containing hydrogen radicals generated by the hydrogen radical generating unit is jetted on a rotating silicon wafer after cleaning operation so that the drying and hydrogen termination treatment of the external surface of silicon wafer are simultaneously carried out. <IMAGE>
申请公布号 EP1544902(A1) 申请公布日期 2005.06.22
申请号 EP20030808884 申请日期 2003.09.11
申请人 FUJIKIN INCORPORATED;OHMI, TADAHIRO;PRE-TECH CO., LTD 发明人 OHMI, TADAHIRO;SHIRAI, YASUYUKI;FUJITA, TAKUMI;MINAMI, YUKIO;IKEDA, NOBUKAZU;MORIMOTO, AKIHIRO;KAWADA, KOJI
分类号 H01L21/304;F26B17/24;F26B17/30;H01L;H01L21/00;H01L21/02;H01L21/30;H01L21/302;(IPC1-7):H01L21/304 主分类号 H01L21/304
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