NON-VOLATILE MEMORY DEVICE HAVING TAMPER RESISTANCE, INTEGRATED CIRCUIT CARD, AUTHENTICATION METHOD FOR NON-VOLATILE MEMORY DEVICE, AND ENCRYPTION METHOD AND DECRYPTION METHOD USING NON-VOLATILE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a PUF (physical unclonable function) technique for generating digital ID data having more excellent security performance.SOLUTION: A non-volatile memory device 10 has a memory cell array 20 comprising plural memory cells having a characteristic that the resistance value transits in a range of plural resistance values in a non-volatile and reversible manner according to application of plural different electrical signals in a variable state, a read-out circuit 11 for acquiring plural pieces of resistance value information concerning the respective resistance values of some memory cells out of the plural memory cells based on an input control signal, and a calculation circuit for calculating a binary reference value based on the plural pieces of resistance value information acquired by the read-out circuit 11. On the basis of the binary reference value, the read-out circuit 11 selectively allocates one of two values to each of the plural pieces of resistance value information and each of plural pieces of resistance value information concerning the respective resistance values of other some memory cells out of the plural memory cells which are different from the former some memory cells and generates individual identification information.SELECTED DRAWING: Figure 18