| 摘要 |
The invention relates to a controllable Bragg reflector (100), which is suitable for reflecting incident light. Said Bragg reflector comprises at least one layer of a superlattice (110), wherein the superlattice comprises at least one layer composed of a first group-3 nitride and at least one second layer composed of a second group-3 nitride. Furthermore, the Bragg reflector comprises at least one layer consisting of a semiconductor material. In addition, at least two electrodes (130, 140) are comprised, wherein at least one electrode is transparent to the incident light (150) or has a suitable structure that ensures at least partial light incidence into the semiconductor and superlattice layers and wherein a voltage (U) can be applied between said electrodes. |
