SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD OF THE SAME, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method which can manufacture a GaN substrate at low cost, which is flat and easy to be detached with respect to a substrate of a dissimilar material; and achieve low cost, increased performance, and long life of a semiconductor device such as an LED and a laser diode, which is manufactured by using the GaN substrate.SOLUTION: A light-emitting diode element manufacturing method of the present invention comprises: forming a plurality of compound semiconductor layers including at least a first semiconductor layer on a first substrate; arranging a second substrate on the plurality of compound semiconductor layers; and separating the first substrate from the plurality of compound semiconductor layers. The step of forming the plurality of compound semiconductor layers includes steps of forming a pattern layer on the first semiconductor layer, forming a plurality of cavities in the first semiconductor layer, and increasing a volume of the plurality of cavities. The step of increasing the volume of the plurality of cavities includes a step of forming a second semiconductor layer on the pattern layer.