发明名称 ELECTRODES EVALUATING METHOD FOR SEMICONDUCTOR ELEMENT AND RECORDING MEDIUM WITH THE METHOD STORED THEREIN
摘要 PROBLEM TO BE SOLVED: To realize a speedy and inexpensive local analysis method which can be applied to various types of electrodes regarding a general number of current components. SOLUTION: In the electrical evaluation of a semiconductor element comprising electrodes and a semiconductor, the interface between the electrode and the semiconductor is regarded as a set of curve sections (A1 , A2 ,..., AM) and planar parts (B1 , B2 ,..., BN), where M>=1 or N>=1, and a length Li of the curve part Ai and the area Si of the planar part Bi are expressed as shape vector (L1 , L2 ..., LM, S2 , S2 ,..., SN), and at least N+M types of the semiconductors which differ in the shape vectors (L1 , L2 ,..., LM, S1 , S2 ,..., SM) are prepared, and a current I flowing through the electrode of the semiconductor under the fixed bias condition of the semiconductor is expressed as a primary function of L1 and S1 in the formula: (formula I(L1 ,..., Lλf , S1 ,..., SN)=Σλi Li +Σσj Sj , where compatibility parametersλ1 andσ1 represent the current densities corresponding to Ai and Bi , respectively.
申请公布号 JPH11317436(A) 申请公布日期 1999.11.16
申请号 JP19990053029 申请日期 1999.03.01
申请人 NEC CORP 发明人 CONTRATA WALTER
分类号 H01L29/73;H01L21/331;H01L21/66;H01L29/00;H01L29/737;H01L29/80;(IPC1-7):H01L21/66 主分类号 H01L29/73
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