| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench gate semiconductor device which can ensure a high breakdown strength performance while ensuring a wide cell region. SOLUTION: This semiconductor device 100 is formed with an outer peripheral trench 4a surrounding in a loop patten so as to surround a cell region 10 when viewed from a direction intersecting a semiconductor substrate 2, and a gate pad 8 for connecting a bonding wire. A curved part 5 curved toward the inside of a loop is formed in a part of the loop formed by the outer peripheral trench 4a when viewed from the direction intersecting the semiconductor substrate 2. In the gate pad 8, a body layer 28 formed in a surface region of the semiconductor substrate 2 located outside of the curved part 5 is formed only inside of the loop. As the outer peripheral trench 4a surrounds a region other than that of the gate pad 8, a wide cell region 10 can be ensured. The body layer 28 is restricted to the inside of the loop, thereby enhancing a breakdown strength characteristic. COPYRIGHT: (C)2009,JPO&INPIT
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