ELECTRIC FIELD ASSISTED PERPENDICULAR STT-MRAM

摘要

Present invention discloses a perpendicular STT-MRAM, a method of operating, and a method of manufacturing the same and a plurality of magnetoresistive memory elements having a recording layer which has an interface interaction with an underneath dielectric functional layer. The energy switch barrier of the recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the perpendicular magnetization of the recording layer is readily reversible in a low spin-transfer switching current.

主权项

1. A method of manufacturing a magnetoresistive memory element comprising
making a digital line; making a dielectric functional layer; making a recording layer; making a tunnel barrier layer; making a reference layer; making a cap layer; making a middle electrode and a bit line; and making a self-aligned patterning process to make the middle electrode electrically connected to the recording layer.