| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area. |
| 申请公布号 |
US2016372467(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615014291 |
申请日期 |
2016.02.03 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Ju-Youn;KIM Hyun-Jo;RHEE Hwa-Sung |
| 分类号 |
H01L27/088;H01L29/06;H01L27/02 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an active fin extending along a first direction and having a protruding shape; a gate structure on the active fin to extend along a second direction intersecting the first direction; and a spacer on at least one side of the gate structure, wherein the gate structure includes a first area and a second area adjacent to the first area in the second direction, and wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along the first area and the second area. |
| 地址 |
Suwon-si KR |
