| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a high coverage smooth dielectric film having a high permittivity in relation to a method of manufacturing a capacitor dielectric film required, in accordance with the tendency for high capacitance of a semiconductor device. SOLUTION: A nano-laminate structure SrO/TiO film is formed on the lower electrode of the capacitor according to the molecular layer depositing method in the surface reaction rate determining state. The TiO film and the SrO film are respectively formed to have one or more molecular layers and twenty or less molecular layers, and are alternately and laminarly formed at a temperature≥150°C and≤400°C, respectively, and at a pressure of 10 Torr or more and equal to an atmospheric pressure or less. Consequently, a high permittivity and high coverage nano-laminate structure SrO film/TiO film can be obtained wherein a crystalline foreign material is not produced. COPYRIGHT: (C)2008,JPO&INPIT
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