发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY AND DATA WRITING METHOD FOR NONVOLATILE SEMICONDUCTOR MEMORY |
摘要 |
A method having the steps of applying the same gate voltage to each of gate terminals of a plurality of memory cells via word lines to designate the memory cells as a write target, and simultaneously applying a write voltage that corresponds to each write data across drain-source terminals of two or more memory cells that are write targets via bit lines to write simultaneously a plurality of data elements having mutually different data values to the memory cells.
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申请公布号 |
US2010020603(A1) |
申请公布日期 |
2010.01.28 |
申请号 |
US20090503091 |
申请日期 |
2009.07.15 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
YUDA TAKASHI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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