发明名称 DATA READ-OUT CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DATA READING IN SEMICONDUCTOR MEMORY DEVICE
摘要 A data read-out circuit is provided with a sense amplifier circuit and a selector. The sense amplifier circuit senses a stored data stored in a memory cell array by using a plurality of reference levels to generate a plurality of read data, respectively. Thus, the sense amplifier circuit outputs the plurality of read data with regard to the stored data. The selector selects a data corresponding to any one of the plurality of read data based on a control signal and outputs the selected data as an output data.
申请公布号 US2008052565(A1) 申请公布日期 2008.02.28
申请号 US20070834426 申请日期 2007.08.06
申请人 NEC ELECTRONICS CORPORATION 发明人 OKU SATORU
分类号 G11C29/00;G11C7/10 主分类号 G11C29/00
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