| 摘要 |
PROBLEM TO BE SOLVED: To provide a sintered body that shows excellent resistance to halogen-based plasma and is useful as a constituent material of a semiconductor manufacturing apparatus such as an etching apparatus.SOLUTION: A sintered body contains an oxyfluoride of yttrium. The oxyfluoride of yttrium is preferably YOF and/or YOF. The sintered body preferably has a relative density of 70% or more and an open porosity of 10% or less, and has a three-point bending strength of 10-300 MPa. A method of manufacturing a sintered body includes the steps of: obtaining a molded article of a raw material powder containing an oxyfluoride of yttrium; and sintering the molded article under a pressure of 5-100 MPa and at a temperature of 800-1,800°C to obtain a sintered body.SELECTED DRAWING: None |
